DS_Q48DR1R533_03152007
TECHNICAL SPECIFICATIONS (T
A
=25°C, airflow rate=300 LFM, V
in
=48Vdc, nominal Vout unless otherwise noted.)
PARAMETER NOTES and CONDITIONS Q48DR1R533NRFA
Min. Typ. Max. Units
ABSOLUTE MAXIMUM RATINGS
Input Voltage
Continuous 80 Vdc
Transient (100ms) <100ms 100 Vdc
Operating Temperature Please refer to figure 27 for measuring point -40 120 °C
Storage Temperature -55 125 °C
Input/Output Isolation Voltage 1500 Vdc
INPUT CHARACTERISTICS
Operating Input Voltage 36 48 75 Vdc
Input Under-Voltage Lockout
Turn-On Voltage Threshold 33 34 35 Vdc
Turn-Off Voltage Threshold 31 32 33 Vdc
Lockout Hysteresis Voltage 1 2 3 Vdc
Maximum Input Current 100%load, 36Vin 2.7 A
No-Load Input Current 100 150 mA
Off Converter Input Current 5 10 mA
Inrush Current(I
2
t) 0.015 A
2
s
Input Reflected-Ripple Current P-P thru 12µH inductor, 5Hz to 20MHz 10 mA
Input Voltage Ripple Rejection 120Hz 50 dB
OUTPUT CHARACTERISTICS
Vout 1 1.476 1.500 1.524
Output Voltage Set Point
Vin=48V, Io=Io.max, Tc=25℃
Vout 2 3.247 3.300 3.353
Vdc
Output Voltage Regulation
Io1=Io, min to Io, max, Io2=0A Vout 1
Over Load
Io2=Io, min to Io, max, Io1=0A Vout 2
±5 ±10 mV
Vout 1
Over Line Vin=36V to 75V,Io1=Io2=full load
Vout 2
±3 ±10 V
Cross Regulation Worse Case ±5 ±10 mV
Over Temperature
Tc=-40 ℃ to 85 ℃
±15 ±50
Vout 1 1.455 1.545 V
Total Output Voltage Range Over sample load, line and temperature
Vout 2 3.201 3.399 V
Output Voltage Ripple and Noise 5Hz to 20MHz bandwidth
Vout 1 40 80
Peak-to-Peak Io1, Io2 Full Load, 1µF ceramic, 10µF tantalum
Vout 2 40 80
mV
Vout 1 10 30
RMS Io1, Io2 Full Load, 1µF ceramic, 10µF tantalum
Vout 2 10 30
mV
Vout 1 0 15
Operating Output Current Range
Vout 2 0 15
A
Vout 1 100% 150%
Output DC Current-Limit Inception
Vout 2 100% 150%
DYNAMIC CHARACTERISTICS
Output Voltage Current Transient 48V, 10µF Tan & 1µF Ceramic load cap, 0.1A/µs
Vout 1 100
Positive Step Change in Output Current
Iout1from 50% Io, max to 75% Io, max
Vout 2
100
mV
Vout 1 100
Negative Step Change in Output Current
Iout2 from 75% Io, max to 50% Io, max
Vout 2
100
mV
Cross dynamic Each channel independence 20 mV
Settling Time (within 1% Vout nominal) 150 US
Turn-On Transient
Start-up Time, From On/Off Control 10 15 MS
Start-up Time, From Input 10 15 mS
Vout 1 10000
Maximum Output Capacitance Full load; 5% overshoot of Vout at startup
Vout 2 10000
µF
EFFICIENCY
100% Load Iout1, Iout2 full load, 48vdc Vin 87.5 %
60% Load Iout1, Iout2 60% of full load, 48vdc Vin 88 %
ISOLATION CHARACTERISTICS
Input to Output 1500 Vdc
Isolation Resistance 10 MΩ
Isolation Capacitance 3000 pF
FEATURE CHARACTERISTICS
Switching Frequency 350 kHz
ON/OFF Control, (Logic Low-Module ON)
Logic Low Von/off at Ion/off=1.0mA 0 0.8 V
Logic High Von/off at Ion/off=0.0 µA 18 V
ON/OFF Current Ion/off at Von/off=0.0V 1 mA
Leakage Current Logic High, Von/off=15V 50 uA
Output Voltage Trim Range
Pout ≦ max rated power
-10 +10 %
Output Over-Voltage Protection Over full temp range; %of nominal Vout 115 122 130 %
GENERAL SPECIFICATIONS
MTBF Io=80% of Io, max; Ta=25°C 300LFM 2.5 Mhours
Weight 26.5 grams
Over-Temperature Shutdown Please refer to figure 27 for measuring point 128 °C
2
(11 pages)
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